Our Semiconductor Wafers
High-purity, precision-engineered wafers for advanced semiconductor applications
SiC Wafer Substrate
Silicon Carbide wafers for high-power, high-temperature, and high-frequency devices. Available in 4H and 6H polytypes with precise doping control.
- • 2-6 inch diameters
- • N-type, Semi-insulating
- • Low defect density
- • Applications: Power electronics, RF
GaN Freestanding Substrate
High-quality bulk GaN wafers for UHB-LEDs, laser diodes, and high-electron-mobility transistors (HEMTs).
- • 2 inch standard size
- • Low dislocation density
- • C-plane, semi-polar options
- • Applications: Optoelectronics, RF
SiC Epitaxy
Epitaxial layers grown on SiC substrates for power devices with precise thickness and doping control.
- • Thickness: 1–100 μm
- • Doping: N-type, P-type
- • Low background impurity
- • Applications: MOSFETs, Schottky diodes
Silicon Wafers
High-purity silicon wafers including FZ, CZ, epitaxial, and test wafers for R&D and production.
- • 150mm, 200mm, 300mm
- • FZ, CZ, Epi, Polished
- • Prime, Test, Monitor grades
- • TOX, Etching, Dummy options
GaAs Wafers
Gallium Arsenide substrates and epitaxial wafers for LEDs, laser diodes, and microelectronics.
- • 2", 3", 4", 6" diameters
- • (100), (111) orientations
- • Semi-insulating, N-type
- • Applications: Photonics, RF
Compound Semiconductors
Indium-based wafers including InP, InAs, InSb, GaSb for advanced optoelectronic and quantum applications.
- • VGF, LEC growth methods
- • High purity, low defects
- • Custom doping available
- • Applications: IR detectors, Qubits
Germanium Wafers
Germanium single crystals and wafers grown by VGF/LEC methods for IR optics and photovoltaics.
- • 2", 3", 4" diameters
- • P-type, N-type, intrinsic
- • Polished, etched finishes
- • Applications: IR windows, solar cells
SiC Wafer Reclaim
Cost-effective reclaim service for used SiC wafers, restoring surface quality for reuse in R&D.
- • Full cleaning and polishing
- • Surface roughness < 0.5 nm
- • Fast turnaround
- • Ideal for prototyping